| PART |
Description |
Maker |
| STB26NM60N STB26NM60NTRL |
20 A, 600 V, 0.165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
意法半导
STMICROELECTRONICS
|
| MUX08AQ_883C MUX08BQ_883C MUX08EP |
8-Chan/Dual 4-Chan JFET Analog Multiplexers (Overvoltage & Power Supply Loss Protected)
|
Analog Devices
|
| NPR2-T221 NHS2-T221 NHR2-T221 NPS2-T220 NPS2-T221 |
RESISTOR, METAL GLAZE/THICK FILM, 1.5 W, 1; 2; 5 %, 50; 100; 300; 600 ppm, 0.02 ohm - 100000 ohm, THROUGH HOLE MOUNT TO-220
RESISTOR, METAL GLAZE/THICK FILM, 1.5 W, 1; 2; 5 %, 50; 100; 300; 600 ppm, 0.02 ohm - 100000 ohm, SURFACE MOUNT TO-220
RESISTOR, METAL GLAZE/THICK FILM, 1.5 W, 1; 2; 5 %, 50; 100; 300; 600 ppm, 0.02 ohm - 100000 ohm, THROUGH HOLE MOUNT TO-221
Power Resistors
|
Riedon, Inc.
Riedon Powertron
|
| JANSR2N7410 FN4500 |
3.5A, 100V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET 3.5 A, 100 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
From old datasheet system
3.5A 100V 0.600 Ohm Rad Hard N-Channel Power MOSFET
3.5A/ 100V/ 0.600 Ohm/ Rad Hard/ N-Channel Power MOSFET
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| APT18F60B APT38F80L APT29F100L APT29F80J APT21M100 |
15 A, 600 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB ROHS COMPLIANT, 3 PIN
22 A, 800 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA ROHS COMPLIANT, T-MAX, 3 PIN
1000V, 29A, 0.46Max, trr ÷270ns N-Channel FREDFET 17 A, 1000 V, 0.46 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power FREDFET; Package: ISOTOP®; ID (A): 31; RDS(on) (Ohms): 0.21; BVDSS (V): 800; 44 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET
31 A, 1000 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: TO-247 [B]; ID (A): 14; RDS(on) (Ohms): 0.98; BVDSS (V): 1000;
53 A, 600 V, 0.62 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
24 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
|
Microsemi, Corp.
MICROSEMI CORP
|
| S4707-01 |
MOSFET, Switching; VDSS (V): 600; ID (A): 21; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.315; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 0.107; Package: TO-3P
|
Hamamatsu Photonics
|
| SUM18N25-165-E3 |
18 A, 250 V, 0.165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
VISHAY SILICONIX
|
| IPA60R165CP |
21 A, 650 V, 0.165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
INFINEON TECHNOLOGIES AG
|
| STF9NM60N STP9NM60N |
N-channel 600 V, 0.63 Ohm, 6.5 A TO-220FP MDmesh(TM) II Power MOSFET
N-channel 600 V, 0.63 Ohm, 6.5 A TO-220 MDmesh(TM) II Power MOSFET
|
ST Microelectronics
|
| STW21NM60ND STB21NM60ND09 STP21NM60ND STI21NM60ND |
N-channel 600 V, 0.17 Ω, 17 A FDmesh II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247
17 A, 600 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Low input capacitance and gate charge
|
STMicroelectronics
|
| ITE08C06 ITE08F06 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-247AA
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-220AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 8A条一（c）| TO - 220AB现有
|
Continental Device India, Ltd.
|
| IRFZ46N-002 E-018 IRF540N-006 IRF540N-004 IRF540N- |
46 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
48 A, 60 V, 0.023 ohm, N-CHANNE
81 A, 60 V, 0.012 ohm, N-CHANNE
27 A, 100 V, 0.052 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
72 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
98 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
21 A, 150 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
46 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc.
VISHAY INTERTECHNOLOGY INC
|
|
